HfO2 /HfSixOyNz gate oxide ALD 리포트
- 최초 등록일
- 2009.09.03
- 최종 저작일
- 2009.09
- 20페이지/
한컴오피스
- 가격 2,500원
![할인쿠폰받기](/images/v4/document/ico_det_coupon.gif)
소개글
Atomic layer deposited HfO2 /HfSixOyNz stacked gate
dielectrics for metal-oxide-semiconductor structures
서론요약부터 자료분석까지 포괄적인 내용을 구체적으로 다루었습니다.
목차
없음
본문내용
A downstream remote plasma ALD, RPALD system was used to improve the chemical reaction in the ALD process. The substrate used in the system is neutral with respect to the plasma and is located outside of the plasma generation region. This prevents plasma damage to the Si surface and to the deposited film from ion bombardment generated by the plasma. The RPALD can also provide increased reactivity from activated species such as radicals. We selected HfO2 as the high-k gate dielectric because HfO2 has been considered one of the most promising materials among high-k dielectric materials and has gained much attention in recent years. In order to suppress the growth of an unintentional interfacial layer such as HfSixOy and SiOx (x<2), and improve the interface quality of the HfO2 film, a HfSixOyNz layer was used as a buffer layer. Since HfSixOyNz has better thermal stability than the HfO2 film, it can be useful to control the formation of an interfacial layer. Therefore, we grew a thin HfSixOyNz layer on Si substrates prior to HfO2 growth and investigated the effects of the HfSixOyNz layer on HfO2 films grown with the RPALD method.
참고 자료
<Atomic layer deposited HfO2 /HfSixOyNz stacked gate
dielectrics for metal-oxide-semiconductor structures>
Seokhoon Kim, Sanghyun Woo, Hyungchul Kim, Wooho Jeong, Taeyong Park, Honggyu Kim, Sung Bae Kim, and Hyeongtag Jeona