박막증착 공정과 식각 공정 자료입니다.

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목차

1. Thin Film Deposition
1) Physical deposition (Evaporation and Sputtering)
2) Chemical deposition
2. Etching Processes
3. Reference

본문내용

1. Thin Film Deposition
Deposition can be separated two kinds. One is physical deposition, and another is chemical deposition.
1) Physical deposition (Evaporation and Sputtering)
① Evaporation
The metal layers for all of the early semiconductor technologies were deposited by evaporation. Although still widely used in research applications and for Ⅲ-Ⅴ technologies, evaporation has been displaced by sputtering and in some cases by electroplating in most silicon technologies for two reasons. The first is the ability to cover surface topology, also called the step coverage. As the lateral dimensions of transistors have decreased, the thickness of many of the layers has remained nearly constant. As a result, the topology that the metal must cover has become more severe. Evaporated films have very poor ability to cover for these structures, often becoming discontinuous on the vertical walls. It is also difficult to produce well-controlled alloys by evaporation. Since some technologies require alloys to form reliable contacts and/or metal lines,

참고 자료

1) 미세전자공학 2nd edition, Stephen A. Campbell, 홍릉과학출판사(2003)
2) 반도체소자공정기술, Michael Quirk 외 1명, 청문각(2006)
3) JOURNAL DE PHYSIQUE IV Colloque C3, suppldment au Journal de Physique 11, Volume 3, aoiit 1993 On the behavior of rapid thermal CVD reactors, S. AIT AMER
4) www.google.com 이미지 검색
5) ㈜ Hynix 기술자료 (Etching process 기초)
6) Lecture note #15, Nathan Cheung, UC Buckley