Bias process for heteroepitaxial diamond nucleation on Ir substrates
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서지정보
ㆍ발행기관 : 한국탄소학회
ㆍ수록지정보 : Carbon letters / 33권 / 2호
ㆍ저자명 : Weihua Wang, Shilin Yang, Benjian Liu, Xiaobin Hao, Jiecai Han, Bing Dai, Jiaqi Zhu
ㆍ저자명 : Weihua Wang, Shilin Yang, Benjian Liu, Xiaobin Hao, Jiecai Han, Bing Dai, Jiaqi Zhu
목차
Abstract1 Introduction
2 Experimental
3 Results and discussion
3.1 Evolution of nucleation with bias time
3.2 Interdependent relationship between bias voltage and bias time
3.3 Correlation between bias voltage and reactor-chamber pressure
3.4 Bias-enhanced nucleation and growth at a high CH4 content
3.5 Diamond nucleation on a large scale
4 Conclusion
Acknowledgements
References
영어 초록
Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with increasing bias time, the diamondnucleation pathway is found to transform from “isolated-crystal nucleation” to “typical domain-nucleation” and back to “isolated-crystal nucleation.” An interdependent relationship between bias voltage and bias time is proposed: the higher the bias voltage, the shorter the bias time. Second, a correlation exists between the threshold bias voltage and reactor-chamber pressure: a higher reactor chamber pressure usually requires a higher threshold bias voltage to realize “typical domain nucleation.” Third, diamond bias-enhanced nucleation and growth is observed at a high CH4 content, where the dynamic equilibrium between amorphous-carbon-layer deposition and atomic-hydrogen etching is broken. Finally, epitaxial nucleation is obtained on a substrate with ∅30 mm in a home-made MPCVD setup.참고 자료
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